IPB77N06S3-09

IPB77N06S3-09



Производитель:

Infineon Technologies
Описание:
 MOSFET N-CHAN ENH AUTO 55V D2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-263
Год:
 06+

Datasheet (Техническое описание) IPB77N06S3-09

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIPB77N06S3-09
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C77A
Rds On (Max) @ Id, Vgs8.8 mOhm @ 39A, 10V
Input Capacitance (Ciss) @ Vds 5335pF @ 25V
Power - Max107W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB77N06S3 09
IPB77N06S309


 
Похожие микросхемы:


IPBH6N03LA
MOSFET N-CH 25V 50A D2PAK
IPB80N08S2L-07
MOSFET N-CH 75V 80A TO263-3
IPB80N08S2-07
MOSFET N-CH 75V 80A TO263-3
IPB80N06S3L-06
MOSFET N-CH 55V 80A TO-263
IPB80N06S3L-05
MOSFET N-CH 55V 80A TO-263
IPB80N06S3-07
MOSFET N-CH 55V 80A D2PAK
IPB80N06S3-05
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-H5
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-11
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-09
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-07
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-06
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-05
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-H5
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-09
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-08
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-07
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-05
MOSFET N-CH 55V 80A TO263-3
IPB80N04S3-06
MOSFET N-CH 40V 80A TO263-3
IPB80N04S3-04
MOSFET N-CH 40V 80A TO263-3