IPB80N06S2L-09




Производитель:

Infineon Technologies
Описание:
 MOSFET N-CH 55V 80A TO263-3
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 INFINEON

Datasheet (Техническое описание) IPB80N06S2L-09

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationIPB80N06S2L-09
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs8.2 mOhm @ 52A, 10V
Input Capacitance (Ciss) @ Vds 2620pF @ 25V
Power - Max190W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs105nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N06S2L 09
IPB80N06S2L09


 
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