IPB80N06S2L-06




Производитель:

Infineon Technologies
Описание:
 MOSFET N-CH 55V 80A TO263-3
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 INFINEON

Datasheet (Техническое описание) IPB80N06S2L-06

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIPB80N06S2L-06
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6 mOhm @ 69A, 10V
Input Capacitance (Ciss) @ Vds 3800pF @ 25V
Power - Max250W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs150nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N06S2L 06
IPB80N06S2L06


 
Похожие микросхемы:


IPBH6N03LA
MOSFET N-CH 25V 50A D2PAK
IPB80N08S2L-07
MOSFET N-CH 75V 80A TO263-3
IPB80N08S2-07
MOSFET N-CH 75V 80A TO263-3
IPB80N06S3L-06
MOSFET N-CH 55V 80A TO-263
IPB80N06S3L-05
MOSFET N-CH 55V 80A TO-263
IPB80N06S3-07
MOSFET N-CH 55V 80A D2PAK
IPB80N06S3-05
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-H5
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-11
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-09
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-07
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-05
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-H5
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-09
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-08
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-07
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-05
MOSFET N-CH 55V 80A TO263-3
IPB80N04S3-06
MOSFET N-CH 40V 80A TO263-3
IPB80N04S3-04
MOSFET N-CH 40V 80A TO263-3
IPB80N04S3-03
MOSFET N-CH 40V 80A TO263-3