IPB60R165CP

IPB60R165CP



Производитель:


Infineon Technologies
Описание:
MOSFET N-CH 650V 21A D2PAK
Категория:
Discrete Semiconductor Products
Корпус:
TO-263
Год:
06+

Datasheet (Техническое описание) IPB60R165CP

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIPB60R165CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs165 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 2000pF @ 100V
Power - Max192W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs52nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB60R165CP
IPB60R165CP


 
Похожие микросхемы:


IPBH6N03LA
MOSFET N-CH 25V 50A D2PAK
IPB80N08S2L-07
MOSFET N-CH 75V 80A TO263-3
IPB80N08S2-07
MOSFET N-CH 75V 80A TO263-3
IPB80N06S3L-06
MOSFET N-CH 55V 80A TO-263
IPB80N06S3L-05
MOSFET N-CH 55V 80A TO-263
IPB80N06S3-07
MOSFET N-CH 55V 80A D2PAK
IPB80N06S3-05
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-H5
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-11
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-09
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-07
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-06
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-05
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-H5
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-09
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-08
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-07
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-05
MOSFET N-CH 55V 80A TO263-3
IPB80N04S3-06
MOSFET N-CH 40V 80A TO263-3
IPB80N04S3-04
MOSFET N-CH 40V 80A TO263-3