IPB100N06S3-04

IPB100N06S3-04



Производитель:


Infineon Technologies (VA)
Описание:
MOSFET N-CH 55V 100A TO-263
Категория:
Discrete Semiconductor Products
Корпус:
7850
Год:
INFINEON

Datasheet (Техническое описание) IPB100N06S3-04

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIPB100N06S3-04
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs4.1 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 14230pF @ 25V
Power - Max214W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs314nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB100N06S3 04
IPB100N06S304
IPB100N06S3 04INCT ND
IPB100N06S304INCTND
IPB100N06S3-04INCT


 
Похожие микросхемы:


IPBH6N03LA
MOSFET N-CH 25V 50A D2PAK
IPB80N08S2L-07
MOSFET N-CH 75V 80A TO263-3
IPB80N08S2-07
MOSFET N-CH 75V 80A TO263-3
IPB80N06S3L-06
MOSFET N-CH 55V 80A TO-263
IPB80N06S3L-05
MOSFET N-CH 55V 80A TO-263
IPB80N06S3-07
MOSFET N-CH 55V 80A D2PAK
IPB80N06S3-05
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-H5
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-11
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-09
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-07
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-06
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L-05
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-H5
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-09
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-08
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-07
MOSFET N-CH 55V 80A TO263-3
IPB80N06S2-05
MOSFET N-CH 55V 80A TO263-3
IPB80N04S3-06
MOSFET N-CH 40V 80A TO263-3
IPB80N04S3-04
MOSFET N-CH 40V 80A TO263-3