NTMSD6N303R2

NTMSD6N303R2



Производитель:

ON Semiconductor
Описание:
 MOSFET N-CH 30V 6A 8-SOIC
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 06+

Datasheet (Техническое описание) NTMSD6N303R2

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationNTMSD6N303R2
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs32 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 950pF @ 24V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTMSD6N303R2
NTMSD6N303R2
NTMSD6N303R2OS ND
NTMSD6N303R2OSND
NTMSD6N303R2OS


 
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