NTMS4N01R2G

NTMS4N01R2G



Производитель:

ON Semiconductor
Описание:
 MOSFET N-CH 20V 3.3A 8-SOIC
Категория:
 Discrete Semiconductor Products
Корпус:
 SOIC-8 Narrow Body
Год:
 08+

Datasheet (Техническое описание) NTMS4N01R2G

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationNTMS4N01R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs40 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds 1200pF @ 10V
Power - Max770mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMS4N01R2G
NTMS4N01R2G
NTMS4N01R2GOS ND
NTMS4N01R2GOSND
NTMS4N01R2GOS


 
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