NSBC124EDXV6T1G

NSBC124EDXV6T1G



Производитель:

ON Semiconductor
Описание:
 TRANS BRT NPN DUAL 50V SOT563
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) NSBC124EDXV6T1G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationNSBC124EDXV6T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type2 NPN - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max500mW
Resistor - Base (R1) (Ohms)22K
Resistor - Emitter Base (R2) (Ohms)22K
Vce Saturation (Max) @ Ib, Ic250mV @ 300??A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSOT-563
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSBC124EDXV6T1G
NSBC124EDXV6T1G
NSBC124EDXV6T1GOSTR ND
NSBC124EDXV6T1GOSTRND
NSBC124EDXV6T1GOSTR


 
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