NSBC123JPDXV6T1G

NSBC123JPDXV6T1G



Производитель:


ON Semiconductor (VA)
Описание:
TRANS BR NPN/PNP DUAL 50V SOT563
Категория:
Discrete Semiconductor Products
Корпус:
--
Год:
--

Datasheet (Техническое описание) NSBC123JPDXV6T1G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationNSBC123JPDXV6T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max500mW
Resistor - Base (R1) (Ohms)2.2K
Resistor - Emitter Base (R2) (Ohms)47K
Vce Saturation (Max) @ Ib, Ic250mV @ 300??A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSOT-563
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSBC123JPDXV6T1G
NSBC123JPDXV6T1G
NSBC123JPDXV6T1GOSDKR ND
NSBC123JPDXV6T1GOSDKRND
NSBC123JPDXV6T1GOSDKR


 
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