FDN359BN

FDN359BN



Производитель:


Fairchild Semiconductor (VA)
Описание:
MOSFET N-CHAN 30V 2.7A SSOT3
Категория:
Discrete Semiconductor Products
Корпус:
--
Год:
08+

Datasheet (Техническое описание) FDN359BN

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDN359BN
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.7A
Rds On (Max) @ Id, Vgs46 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds 650pF @ 15V
Power - Max460mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs7nC @ 5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN359BN
FDN359BN
FDN359BNDKR ND
FDN359BNDKRND
FDN359BNDKR


 
Похожие микросхемы:


FDN5630
MOSFET N-CHAN 60V 1.7A SSOT3
FDN5618P
MOSFET P-CHAN 60V 1.25A SSOT3
FDN372S
MOSFET N-CH 30V 2.6A SSOT-3
FDN371N
MOSFET N-CH 20V 2.5A SSOT-3
FDN361BN
MOSFET N-CH 30V SSOT3
FDN361AN
MOSFET N-CH 30V 1.8A SSOT-3
FDN360P
MOSFET P-CHAN 30V 2A SSOT3
FDN359AN
MOSFET N-CHAN 30V 2.7A SSOT3
FDN358P
MOSFET P-CHAN 30V 1.5A SSOT3
FDN357N
MOSFET N-CHAN 30V 1.9A SSOT3
FDN352AP
MOSFET P-CH 30V 1.3A SSOT-3
FDN342P
MOSFET P-CH 20V 2A SSOT-3
FDN340P
MOSFET P-CHAN 20V 2A SSOT3
FDN339AN
MOSFET N-CHAN 20V 3A SSOT3
FDN338P
MOSFET P-CH 20V 1.6A SSOT3
FDN337N
MOSFET N-CH 30V 2.2A SSOT3
FDN336P
MOSFET P-CHAN 20V 1.3A SSOT3
FDN335N
MOSFET N-CHAN 20V 1.7A SSOT3
FDN327N
MOSFET N-CH 20V 2A SSOT-3