FDN357N

FDN357N



Производитель:


Fairchild Semiconductor
Описание:
MOSFET N-CHAN 30V 1.9A SSOT3
Категория:
Discrete Semiconductor Products
Корпус:
SOT-23
Год:
06+

Datasheet (Техническое описание) FDN357N

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDN357N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1.9A
Rds On (Max) @ Id, Vgs60 mOhm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds 235pF @ 10V
Power - Max460mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.9nC @ 5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN357N
FDN357N
FDN357NTR ND
FDN357NTRND
FDN357NTR


 
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