FDC6561AN

FDC6561AN



Производитель:

Fairchild Semiconductor
Описание:
 MOSFET N-CHAN DUAL 30V SSOT6
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 06+

Datasheet (Техническое описание) FDC6561AN

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDC6561AN
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.5A
Rds On (Max) @ Id, Vgs95 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 220pF @ 15V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.2nC @ 5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6561AN
FDC6561AN
FDC6561ANTR ND
FDC6561ANTRND
FDC6561ANTR


 
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