FDC855N

FDC855N



Производитель:

Fairchild Semiconductor (VA)
Описание:
 MOSFET N-CH 30V 6.1A LL 6-SSOT
Категория:
 Discrete Semiconductor Products
Корпус:
 SSOT-6
Год:
 08+

Datasheet (Техническое описание) FDC855N

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationFDC855N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6.1A
Rds On (Max) @ Id, Vgs27 mOhm @ 6.1A, 10V
Input Capacitance (Ciss) @ Vds 655pF @ 15V
Power - Max800mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC855N
FDC855N
FDC855NCT ND
FDC855NCTND
FDC855NCT


 
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