IXTP2N100

IXTP2N100



Производитель:

IXYS
Описание:
 MOSFET N-CH 1000V 2A TO-220AB
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-220
Год:
 06+

Datasheet (Техническое описание) IXTP2N100

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIXTP2N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs7 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 825pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP2N100
IXTP2N100


 
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