IXTY1R4N100P




Производитель:

IXYS
Описание:
 MOSFET N-CH 1000V 1.4A TO-252
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) IXTY1R4N100P

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIXTY1R4N100P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C1.4A
Rds On (Max) @ Id, Vgs11 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max63W
PackagingTube
Gate Charge (Qg) @ Vgs17.8nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY1R4N100P
IXTY1R4N100P


 
Похожие микросхемы:


IXTY64N055T
MOSFET N-CH 55V 64A TO-252
IXTY5N50P
MOSFET N-CH 500V 4.8A TO-252AA
IXTY55N075T
MOSFET N-CH 75V 55A TO-252
IXTY50N085T
MOSFET N-CH 85V 50A TO-252
IXTY44N10T
MOSFET N-CH 100V 44A TO-252
IXTY3N60P
MOSFET N-CH 600V 3A D-PAK
IXTY3N50P
MOSFET N-CH 500V 3A D-PAK
IXTY2R4N50P
MOSFET N-CH 500V 2.4A DPAK
IXTY2N80P
MOSFET N-CH 800V 2A TO-252AA
IXTY2N60P
MOSFET N-CH 600V 2A D-PAK
IXTY2N100P
MOSFET N-CH 1000V 2A TO-252
IXTY24N15T
MOSFET N-CH 150V 24A TO-252
IXTY1R6N50P
MOSFET N-CH 500V 1.6A DPAK
IXTY1R4N60P
MOSFET N-CH 600V 1.4A D-PAK
IXTY1R4N120P
MOSFET N-CH 1200V 1.4A TO-252
IXTY1N120P
MOSFET N-CH 1200V 1A TO-252
IXTY1N100P
MOSFET N-CH 1000V 1A TO-252
IXTY15N20T
MOSFET N-CH 200V 15A TO-252
IXTY12N06T
MOSFET N-CH 60V 12A TO-252