IXTP06N120P

IXTP06N120P



Производитель:

IXYS
Описание:
 MOSFET N-CH 1200V 600MA TO-220
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 IXYS

Datasheet (Техническое описание) IXTP06N120P

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIXTP06N120P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C600mA
Rds On (Max) @ Id, Vgs32 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 270pF @ 25V
Power - Max42W
PackagingTube
Gate Charge (Qg) @ Vgs13.3nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP06N120P
IXTP06N120P


 
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