ISL2111ABZ

ISL2111ABZ



Производитель:

Intersil
Описание:
 IC MSFT DVR HALF-BRG 100V 8-SOIC
Категория:
 Integrated Circuits (ICs)
Корпус:
 SOP
Год:
 1000

Datasheet (Техническое описание) ISL2111ABZ

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationISL2111ABZ
VendorIntersil
CategoryIntegrated Circuits (ICs)
ConfigurationHalf Bridge
Voltage - Supply8 V ~ 14 V
Current - Peak3A
Delay Time38ns
Package / Case8-SOIC (3.9mm Width)
PackagingTube
Number of Outputs2
Input TypeNon-Inverting
Number of Configurations1
Operating Temperature-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)100V
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ISL2111ABZ
ISL2111ABZ


 
Похожие микросхемы:


ISL9V5045S3ST
IGBT N-CH IGN 480V D2PAK
ISL9V5036S3ST
IGBT N-CH IGNTN 360V 46A TO263AB
ISL9V5036S3
IGBT N-CH IGNTN 360V 46A TO262AA
ISL9V3040S3ST
IGBT N-CH IGNTN 400V 21A TO263AB
ISL9V3040P3
IGBT N-CH IGNTN 400V 21A TO220AB
ISL9V3040D3ST
IGBT N-CH IGNTN 400V 21A TO252AA
ISL9V3036S3ST
IGBT N-CHAN 360V 300MJ TO-263AB
ISL9V3036D3ST
IGBT N-CHAN 360V 300MJ TO-252AA
ISL9V3036D3S
IGBT N-CHAN 360V 300MJ TO-252AA
ISL9V2540S3ST
IGBT IGNITION N-CH D2PAK
ISL9V2040S3ST
IGBT N-CH IGNTN 400V 10A TO263AB
ISL9V2040D3ST
IGBT N-CH IGNTN 400V 10A TO252AA
ISL9R860S3ST
DIODE STEALTH 600V 8A TO-263AB
ISL9R860PF2
DIODE STEALTH 600V 8A TO-220F
ISL9R860P2
DIODE STEALTH 600V 8A TO-220AC
ISL9R8120S3ST
DIODE STEALTH 1200V 8A TO-263AB
ISL9R8120P2
8 AMP 1200V STEALTH DIODE
ISL9R460S3ST
DIODE STEALTH 600V 4A TO-263AB
ISL9R460PF2
DIODE STEALTH 600V 4A TO-220AC