ISL9V2540S3ST




Производитель:

Fairchild Semiconductor
Описание:
 IGBT IGNITION N-CH D2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) ISL9V2540S3ST

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationISL9V2540S3ST
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeLogic
Voltage - Collector Emitter Breakdown (Max)430V
Current - Collector (Ic) (Max)15.5A
Vce(on) (Max) @ Vge, Ic1.8V @ 4V, 6A
Power - Max166.7W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ISL9V2540S3ST
ISL9V2540S3ST


 
Похожие микросхемы:


ISL9V5045S3ST
IGBT N-CH IGN 480V D2PAK
ISL9V5036S3ST
IGBT N-CH IGNTN 360V 46A TO263AB
ISL9V5036S3
IGBT N-CH IGNTN 360V 46A TO262AA
ISL9V3040S3ST
IGBT N-CH IGNTN 400V 21A TO263AB
ISL9V3040P3
IGBT N-CH IGNTN 400V 21A TO220AB
ISL9V3040D3ST
IGBT N-CH IGNTN 400V 21A TO252AA
ISL9V3036S3ST
IGBT N-CHAN 360V 300MJ TO-263AB
ISL9V3036D3ST
IGBT N-CHAN 360V 300MJ TO-252AA
ISL9V3036D3S
IGBT N-CHAN 360V 300MJ TO-252AA
ISL9V2040S3ST
IGBT N-CH IGNTN 400V 10A TO263AB
ISL9V2040D3ST
IGBT N-CH IGNTN 400V 10A TO252AA
ISL9R860S3ST
DIODE STEALTH 600V 8A TO-263AB
ISL9R860PF2
DIODE STEALTH 600V 8A TO-220F
ISL9R860P2
DIODE STEALTH 600V 8A TO-220AC
ISL9R8120S3ST
DIODE STEALTH 1200V 8A TO-263AB
ISL9R8120P2
8 AMP 1200V STEALTH DIODE
ISL9R460S3ST
DIODE STEALTH 600V 4A TO-263AB
ISL9R460PF2
DIODE STEALTH 600V 4A TO-220AC