PDTD123YS,126

PDTD123YS,126



Производитель:

NXP Semiconductors
Описание:
 TRANS NPN 50V 500MA SOT54
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) PDTD123YS,126

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Technical/Catalog InformationPDTD123YS,126
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)500mA
Power - Max50mW
Resistor - Base (R1) (Ohms)2.2K
Resistor - Emitter Base (R2) (Ohms)10K
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Frequency - Transition-
Mounting TypeThrough Hole
Package / CaseTO-92-3
PackagingTape & Box (TB)
Drawing Number568; SOT54; ; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PDTD123YS,126
PDTD123YS,126


 
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