PDTD113ET,215

PDTD113ET,215



Производитель:

NXP Semiconductors
Описание:
 TRANS NPN W/RES 50V SOT-23
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) PDTD113ET,215

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Technical/Catalog InformationPDTD113ET,215
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)500mA
Power - Max250mW
Resistor - Base (R1) (Ohms)1K
Resistor - Emitter Base (R2) (Ohms)1K
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 50mA, 5V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSST3 (SOT-23-3)
PackagingTape & Reel (TR)
Drawing Number568; SOT23; ; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PDTD113ET,215
PDTD113ET,215


 
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