PBRN123ES,126

PBRN123ES,126



Производитель:

NXP Semiconductors
Описание:
 TRANS NPN W/RES 40V TO-92
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) PBRN123ES,126

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Technical/Catalog InformationPBRN123ES,126
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)800mA
Power - Max700mW
Resistor - Base (R1) (Ohms)2.2K
Resistor - Emitter Base (R2) (Ohms)2.2K
Vce Saturation (Max) @ Ib, Ic160mV @ 10mA, 500mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce280 @ 300mA, 5V
Frequency - Transition-
Mounting TypeThrough Hole
Package / CaseTO-92-3
PackagingTape & Box (TB)
Drawing Number568; SOT54; ; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PBRN123ES,126
PBRN123ES,126


 
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