Technical/Catalog Information | PBRN113ZK,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Pre-Biased |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 600mA |
Power - Max | 570mW |
Resistor - Base (R1) (Ohms) | 1K |
Resistor - Emitter Base (R2) (Ohms) | 10K |
Vce Saturation (Max) @ Ib, Ic | 160mV @ 10mA, 500mA |
Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 300mA, 5V |
Frequency - Transition | - |
Mounting Type | Surface Mount |
Package / Case | SC-59-3, SMT3, SOT-346, TO-236 |
Packaging | Tape & Reel (TR) |
Drawing Number | 568; SOT346; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PBRN113ZK,115 PBRN113ZK,115 |