HGT1S10N120BNST

HGT1S10N120BNST



Производитель:

Fairchild Semiconductor (VA)
Описание:
 IGBT NPT N-CHAN 1200V TO-263AB
Категория:
 Discrete Semiconductor Products
Корпус:
 06+
Год:
 800/REEL

Datasheet (Техническое описание) HGT1S10N120BNST

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationHGT1S10N120BNST
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)35A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGT1S10N120BNST
HGT1S10N120BNST
HGT1S10N120BNSTDKR ND
HGT1S10N120BNSTDKRND
HGT1S10N120BNSTDKR


 
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