HGTP10N120BN

HGTP10N120BN



Производитель:

Fairchild Semiconductor
Описание:
 IGBT NPT N-CH 1200V 35A TO-220AB
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-220
Год:
 06+

Datasheet (Техническое описание) HGTP10N120BN

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationHGTP10N120BN
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)35A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTP10N120BN
HGTP10N120BN


 
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