SGSD100

SGSD100



Производитель:


STMicroelectronics
Описание:
TRANSISTOR DARL NPN COMPL TO-247
Категория:
Discrete Semiconductor Products
Корпус:
TO-3P
Год:
1000

Datasheet (Техническое описание) SGSD100

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationSGSD100
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)25A
Power - Max130W
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 20A, 3V
Vce Saturation (Max) @ Ib, Ic1.2V @ 20mA, 5A
Frequency - Transition-
Current - Collector Cutoff (Max)500??A
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGSD100
SGSD100
497 6727 5 ND
49767275ND
497-6727-5


 
Похожие микросхемы:


SGSD200
TRANSISTOR DARL PNP COMPL TO-247
SGS6N60UFDTU
IGBT ULTRA FAST 600V 3A TO-220F
SGS5N150UFTU
IGBT SWITCHING 1500V 5A TO-220F
SGS23N60UFDTU
IGBT ULTRA FAST 600V 12A TO-220F
SGS13N60UFDTU
IGBT ULT FAST 600V 6.5A TO-220F
SGS10N60RUFDTU
IGBT W/DIODE 600V 10A TO-220F