US6M2TR

US6M2TR



Производитель:

Rohm Semiconductor(VA)
Описание:
 MOSFET N+P 20V 1.5A/1A TUMT6
Категория:
 Discrete Semiconductor Products
Корпус:
 2008
Год:
 3,000

Datasheet (Техническое описание) US6M2TR

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationUS6M2TR
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V, 20V
Current - Continuous Drain (Id) @ 25° C1.5A, 1A
Rds On (Max) @ Id, Vgs240 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 80pF @ 10V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.2nC @ 4.5V
Package / CaseTUMT6
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names US6M2TR
US6M2TR
US6M2DKR ND
US6M2DKRND
US6M2DKR


 
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