NTJD4105CT1G

NTJD4105CT1G



Производитель:

ON Semiconductor (VA)
Описание:
 MOSFET N+P 20,8V 630MA SOT-363
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 06+

Datasheet (Техническое описание) NTJD4105CT1G

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationNTJD4105CT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V, 8V
Current - Continuous Drain (Id) @ 25° C630mA, 775mA
Rds On (Max) @ Id, Vgs375 mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) @ Vds 46pF @ 20V
Power - Max270mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTJD4105CT1G
NTJD4105CT1G
NTJD4105CT1GOSDKR ND
NTJD4105CT1GOSDKRND
NTJD4105CT1GOSDKR


 
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