BDV65BG

BDV65BG



Производитель:

ON Semiconductor
Описание:
 TRANS DARL NPN 100V 10A TO-218
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) BDV65BG

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationBDV65BG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)10A
Power - Max125W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic2V @ 20mA, 5A
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-218
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BDV65BG
BDV65BG


 
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