UNR42170RA

UNR42170RA



Производитель:

Panasonic - SSG (VA)
Описание:
 TRANS NPN W/RES 210 HFE NS-B1
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) UNR42170RA

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationUNR42170RA
VendorPanasonic - SSG (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Resistor - Base (R1) (Ohms)22K
Resistor - Emitter Base (R2) (Ohms)-
Vce Saturation (Max) @ Ib, Ic250mV @ 300??A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Frequency - Transistion150MHz
Mounting TypeSurface Mount
Package / CaseNS-B1
PackagingCut Tape (CT)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names UNR42170RA
UNR42170RA
UNR42170RACT ND
UNR42170RACTND
UNR42170RACT


 
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