UMC3NT1G

UMC3NT1G



Производитель:


ON Semiconductor
Описание:
TRANS BRT NPN/PNP DUAL SOT-353
Категория:
Discrete Semiconductor Products
Корпус:
--
Год:
07+

Datasheet (Техническое описание) UMC3NT1G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationUMC3NT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max150mW
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)10K
Vce Saturation (Max) @ Ib, Ic250mV @ 300??A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names UMC3NT1G
UMC3NT1G
UMC3NT1GOS ND
UMC3NT1GOSND
UMC3NT1GOS


 
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