| Technical/Catalog Information | BCR133E6327 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Pre-Biased |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 200mW |
| Resistor - Base (R1) (Ohms) | 10K |
| Resistor - Emitter Base (R2) (Ohms) | 10K |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500??A, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transistion | 130MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BCR133E6327
BCR133E6327
BCR133INTR ND
BCR133INTRND
BCR133INTR
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