DDTB113EC-7-F

DDTB113EC-7-F



Производитель:

Diodes Inc
Описание:
 TRANS PNP 200MW R1/2 SOT23-3
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) DDTB113EC-7-F

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationDDTB113EC-7-F
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Transistor TypePNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)500mA
Power - Max200mW
Resistor - Base (R1) (Ohms)1K
Resistor - Emitter Base (R2) (Ohms)1K
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 50mA, 5V
Frequency - Transition200MHz
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names DDTB113EC 7 F
DDTB113EC7F


 
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