DDTC114GE-7-F

DDTC114GE-7-F



Производитель:

Diodes Inc
Описание:
 TRANS PREBIASED NPN 150MW SOT523
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) DDTC114GE-7-F

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationDDTC114GE-7-F
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max150mW
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)-
Vce Saturation (Max) @ Ib, Ic300mV @ 500??A, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transistion250MHz
Mounting TypeSurface Mount
Package / CaseSOT-523
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names DDTC114GE 7 F
DDTC114GE7F
DDTC114GE FDITR ND
DDTC114GEFDITRND
DDTC114GE-FDITR


 
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