FDD3510H

FDD3510H



Производитель:

Fairchild Semiconductor (VA)
Описание:
 IC MOSFET DUAL N/P 80V DPAK-4
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-252(DPAK)
Год:
 08+

Datasheet (Техническое описание) FDD3510H

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationFDD3510H
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C4.3A, 2.8A
Rds On (Max) @ Id, Vgs80 mOhm @ 4.3A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 40V
Power - Max1.3W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs18nC @ 10V
Package / CaseDPak, TO-252 (4 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD3510H
FDD3510H
FDD3510HCT ND
FDD3510HCTND
FDD3510HCT


 
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