IXDP35N60B




Производитель:

IXYS
Описание:
 IGBT 600V 60A W/DIODE TO-220AB
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 IXYS

Datasheet (Техническое описание) IXDP35N60B

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIXDP35N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 35A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXDP35N60B
IXDP35N60B


 
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