PSMN102-200Y,115




Производитель:

NXP Semiconductors
Описание:
 MOSFET N-CH 200V 21.5ALFPAK
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) PSMN102-200Y,115

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Technical/Catalog InformationPSMN102-200Y,115
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C21.5A
Rds On (Max) @ Id, Vgs102 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 1568pF @ 30V
Power - Max113W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30.7nC @ 10V
Package / CaseLFPAK
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PSMN102 200Y,115
PSMN102200Y,115


 
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