TPCS8105(TE12L,Q,M




Производитель:

Toshiba
Описание:
 MOSFET P-CH 30V 10A 2-3R1F
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) TPCS8105(TE12L,Q,M

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Technical/Catalog InformationTPCS8105(TE12L,Q,M
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 5710pF @ 10V
Power - Max600mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs107nC @ 10V
Package / Case2-3R1F
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPCS8105 TE12L,Q,M
TPCS8105TE12L,Q,M


 
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