IPP80N06S2-09




Производитель:

Infineon Technologies
Описание:
 MOSFET N-CH 55V 80A TO220-3
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 INFINEON

Datasheet (Техническое описание) IPP80N06S2-09

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIPP80N06S2-09
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs9.1 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 2360pF @ 25V
Power - Max190W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP80N06S2 09
IPP80N06S209


 
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