IPD90R1K2C3




Производитель:

Infineon Technologies
Описание:
 MOSFET N-CH 900V 5.1A TO-252
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) IPD90R1K2C3

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationIPD90R1K2C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C5.1A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds 710pF @ 100V
Power - Max83W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs28nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD90R1K2C3
IPD90R1K2C3


 
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