| Technical/Catalog Information | IMB9AT110 |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 300mW |
| Resistor - Base (R1) (Ohms) | 10K |
| Resistor - Emitter Base (R2) (Ohms) | 2.1K |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transistion | 250MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-457 |
| Packaging | Cut Tape (CT) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IMB9AT110
IMB9AT110
IMB9AT110TR ND
IMB9AT110TRND
IMB9AT110TR
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