HUFA76609D3ST




Производитель:

Fairchild Semiconductor (VA)
Описание:
 IC MOSFET N-CH 100V 10A TO-252AA
Категория:
 Discrete Semiconductor Products
Корпус:
 DIP/SMD
Год:
 -

Datasheet (Техническое описание) HUFA76609D3ST

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationHUFA76609D3ST
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs160 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 425pF @ 25V
Power - Max49W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA76609D3ST
HUFA76609D3ST
HUFA76609D3STCT ND
HUFA76609D3STCTND
HUFA76609D3STCT


 
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