BD810G




Производитель:

ON Semiconductor
Описание:
 TRANS PNP 80V 10A BIPO TO-220AB
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) BD810G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationBD810G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)10A
Power - Max90W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic1.1V @ 300mA, 3A
Frequency - Transition10.5MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD810G
BD810G


 
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BD810
TRANS PNP 80V 10A BIPO TO-220AB
BD809G
TRANS NPN 80V 10A BIPO TO-220AB