NE58219-T1-A




Производитель:

NEC
Описание:
 TRANSISTOR BIPOLAR .9GHZ 3-SMINI
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) NE58219-T1-A

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationNE58219-T1-A
VendorNEC
CategoryDiscrete Semiconductor Products
Frequency - Transition5GHz
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)60mA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain-
Power - Max100mW
Compression Point (P1dB)-
Package / Case1608
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE58219 T1 A
NE58219T1A


 
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