MTY100N10E

Производитель:

ON Semiconductor

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Описание:

MOSFET N-CH 100V 100A TO-264

Категория:

Discrete Semiconductor Products

Корпус:

TO-264

Год:

05+/06+

Technical/Catalog Information	MTY100N10E
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	11 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	10640pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	378nC @ 10V
Package / Case	TO-264-3, TO-3BPL
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTY100N10E MTY100N10E MTY100N10EOS ND MTY100N10EOSND MTY100N10EOS

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