MSB710-RT1

MSB710-RT1



Производитель:

ON Semiconductor
Описание:
 TRANS PNP GP BIPO 50V SC-59
Категория:
 Discrete Semiconductor Products
Корпус:
 SOT23
Год:
 06+

Datasheet (Техническое описание) MSB710-RT1

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationMSB710-RT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)500mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MSB710 RT1
MSB710RT1


 
Похожие микросхемы:


MSB92WT1G
TRANS GP SS PNP 300V SOT323
MSB92WT1
TRANS SS GP PNP 300V SOT323
MSB92T1G
TRANS PNP GP BIPO 300V SC-59
MSB92AWT1G
TRANS PNP GP BIPO 300V SOT-323
MSB92ASWT1G
TRANS GP SS PNP 300V SOT323
MSB92ASWT1
TRANS SS GP PNP 300V SOT323
MSB710-RT1G
TRANS PNP GP BIPO 50V SC-59
MSB709-RT1G
TRANS GP PNP -45V SC59
MSB709-RT1
TRANS GP PNP -45V SC59
MSB1218A-RT1G
TRANS PNP GP 100MA 45V SOT-323
MSB1218A-RT1
TRANS PNP GP 100MA 45V SOT-323