MJE802G

MJE802G



Производитель:

ON Semiconductor
Описание:
 TRANS DARL NPN 4A 80V TO225AA
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 07+PBFREE

Datasheet (Техническое описание) MJE802G

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationMJE802G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)4A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Frequency - Transition-
Current - Collector Cutoff (Max)100??A
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE802G
MJE802G
MJE802GOS ND
MJE802GOSND
MJE802GOS


 
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