RSD200N10TL

RSD200N10TL



Производитель:

Rohm Semiconductor(VA)
Описание:
 MOSFET N-CH 100V 20A CPT3
Категория:
 Discrete Semiconductor Products
Корпус:
 --
Год:
 --

Datasheet (Техническое описание) RSD200N10TL

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationRSD200N10TL
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs52 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 25V
Power - Max20W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs48.5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RSD200N10TL
RSD200N10TL
RSD200N10TLDKR ND
RSD200N10TLDKRND
RSD200N10TLDKR


 
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