STB11NM60-1

STB11NM60-1



Производитель:

STMicroelectronics
Описание:
 MOSFET N-CH 650V 11A I2PAK
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 ST

Datasheet (Техническое описание) STB11NM60-1

Поиск в бесплатном архиве даташитов datasheet.su


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Technical/Catalog InformationSTB11NM60-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs450 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 25V
Power - Max160W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB11NM60 1
STB11NM601
497 5379 5 ND
49753795ND
497-5379-5


 
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