IXGT30N120B3D1

IXGT30N120B3D1



Производитель:

IXYS
Описание:
 IGBT PT 1200V 30A W/DIODE TO268
Категория:
 Discrete Semiconductor Products
Корпус:
 7850
Год:
 IXYS

Datasheet (Техническое описание) IXGT30N120B3D1

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIXGT30N120B3D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 30A
Power - Max300W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT30N120B3D1
IXGT30N120B3D1


 
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