IRF630

IRF630



Производитель:


STMicroelectronics
Описание:
MOSFET N-CH 200V 9A TO-220
Категория:
Discrete Semiconductor Products
Корпус:
TO-220
Год:
06+

Datasheet (Техническое описание) IRF630

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIRF630
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs400 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF630
IRF630
497 2757 5 ND
49727575ND
497-2757-5


 
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